01.10.2013
PVA TePla AG DE0007461006
PVA TePla AG: baSiC-T: New system generation - silicon carbide (SiC) crystals for mass production
(DGAP-Media / 01.10.2013 / 08:00)
- SiC for high-performance electronics
- Successful use in industrial production
- High degree of automation for mass production
- Low operating costs
SiC for high-performance electronics
SiC crystals are mainly required by customers working in high-tech markets.
Typical applications include high-performance electronics such as hybrid
and electric cars, air conditioning systems, LED applications and d.c./a.c.
converters for photovoltaics. The major advantage in silicon carbide
material lies in the enormous energy-saving potential of over 40% compared
to conventional silicon components. In addition to this, the future will
bring completely new prospects in the semi-conductor industry as the
product can also be used at high temperatures and high voltages in excess
of 10,000 volts; this dramatically exceeds the potential of the silicon
used today.
Modular structure and high degree of automation
The design of the innovative crystallization system 'baSiC-T' is based on a
modular concept and allows substrates with a diameter of up to 150 mm to be
used. Low operating costs and a high degree of automation in the baSiC-T
facilitate inexpensive mass production of silicon carbide.
Successful use in industrial production
Systems to manufacture SiC crystals have already been delivered to several
customers in Europe and Asia and been successfully accepted, providing
proof of the systems' outstanding performance.
More detailed information about the baSiC-T can be found at the following
link:
http://www.pvatepla.com/en/products/crystal-growing-systems/pva/sic-(htcvd
-htcvt)/typ-basic-t
PVA TePla in the field of power electronics
In addition to the baSiC-T, a series of other PVA TePla systems are already
being used in the field of power electronics. The SiCube is an industrially
tested system for SiC volume crystal production by means of PVT and HTCVD.
Our Floatzone (FZ35) and Czochralski (EKZ) systems are used to crystallize
high-purity silicon. The recycling of susceptors using GaN epitaxy
processes is performed in special PVA TePla vacuum furnaces. Different
innovative metrology technologies for nondestructive quality control are
also available.
For further information, please contact:
Dr. Gert Fisahn
Investor Relations
PVA TePla AG
Phone: +49(0)641/68690-400
[email protected]
www.pvatepla.com
End of Media Release
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Issuer: PVA TePla AG
Key word(s): Industry
01.10.2013 Dissemination of a Press Release, transmitted by DGAP - a
company of EQS Group AG.
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Language: English
Company: PVA TePla AG
Im Westpark 10-12
35435 Wettenberg
Germany
Phone: 0641/686900
Fax: 0641/68690800
E-mail: [email protected]
Internet: www.pvatepla.com
ISIN: DE0007461006
WKN: 746100
Listed: Regulierter Markt in Frankfurt (Prime Standard);
Freiverkehr in Berlin, Düsseldorf, Hamburg, München,
Stuttgart
End of News DGAP-Media
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